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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCM4464/D
MCM4464 Series 1MB R4000 Secondary Cache Fast Static RAM Module Set
Four MCM4464 modules comprise a full 1 MB of secondary cache for the R4000 processor. Each module contains nine MCM6709J fast static RAMs for a cache data size of 64K x 36. The tag portion, dependent on word line size, contains either two MCM6709J or one MCM6706J fast static RAMs. All input signals, except A0 and WE are buffered using 74FBT2827 drivers with series 25 resistors. The MCM6709J and MCM6706J are fabricated using high-performance silicon-gate BiCMOS technology. Static design eliminates the need for internal clocks or timing strobes. All 1MB R4000 supported secondary cache options are available. * * * * * * * * * * Single 5 V 10% Power Supply All Inputs and Outputs are TTL Compatible Three State Outputs Fast Module Access Time: 12/15/17 ns Zero Wait-State Operation Unified or Split Seconday Cache Modules are Available (See Ordering Information for Details) Word Line Sizes of 4, 8, 16, and 32 are Available (See Ordering Information for Details) The Pin Compatible MCM44256 Series is also Available to Support a Full 4MB R4000 Secondary Cache. Decoupling Capacitors are Used for Each Fast Static RAM and Buffer, Along with Bulk Capacitance for Maximum Noise Immunity High Quality Multi-Layer FR4 PWB with Separate Power and Ground Planes PIN ASSIGNMENT 80 LEAD SIMM -- TOP VIEW
VCC DQ1 DQ3 DQ5 VSS DQ8 DQ10 DQ12 DQ14 DQ15 DQ17 DQ19 DQ21 VSS DQ23 DQ25 DQ27 DQ29 DQ30 DQ32 DQ34 VSS A0 A2 A4 A6 VCC OE A8 A10 VSS A13 A15 NC TDQ0 TDQ1 TDQ3 TDQ5 TDQ7 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66* 68* 70 72 74 76 78 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 51 53 55 57 59 61 63 65 67 69 71 73 75 77 79 VSS DQ0 DQ2 DQ4 DQ6 DQ7 DQ9 DQ11 DQ13 VSS DQ16 DQ18 DQ20 DQ22 VCC DQ24 DQ26 DQ28 VSS DQ31 DQ33 DQ35 WE A1 A3 A5 VSS DCS A7 A9 A11 A12 A14 NC TCS VSS TDQ2 TDQ4 TDQ6
PIN NAMES
A0 - A15 . . . . . . . . . . . . . . . . Address Inputs WE . . . . . . . . . . . . . . . . . . . . . . . Write Enable DCS . . . . . . . . . . . . . . . . . . . . . . Data Enable TCS . . . . . . . . . . . . . . . . . . . . . . . Tag Enable OE . . . . . . . . . . . . . . . . . . . . . Output Enable DQ0 - DQ35 . . . . . . . . . Data Input / Output TDQ0 - TDQ7 . . . TAG Data Input / Output VCC . . . . . . . . . . . . . . . . + 5 V Power Supply VSS . . . . . . . . . . . . . . . . . . . . . . . . . . Ground For proper operation of the device, VSS must be connected to ground.
VCC VSS 80 NOTE: Pin assignment is for unified cache. For split cache option, Pin 68 becomes Address MSB (A15) and Pin 66 is NC.
REV 1 8/94
(c) Motorola, Inc. 1994 MOTOROLA FAST SRAM
MCM4464 SERIES 1
BLOCK DIAGRAM
64K x 36 CACHE
TCS DCS OE A1 A2 A3 - A15 A0 DQ0 - DQ35 WE TDQ0 - TDQ7
74FBT2827 DRIVER
36 8 TAG OPTIONS:
MCM6709J E G A1 A2 A3 - A15 A0 DQ0 - DQ3 W
MCM6709J A0 A1 A2 A3 - A15 E W G DQ0 - DQ7
4 WORD LINE SIZE 64K x 8 TAG
MCM6706J A0 A1 A2 - A14 E W G DQ0 - DQ7 8 WORD LINE SIZE 32K x 8 TAG (A0 NOT USED)
MCM6706J A0 A1 A2 - A14 E W G DQ0 - DQ7 16 WORD LINE SIZE 16K x 8 TAG (A0, A1 NOT USED)
MCM6706J A0 A1 A2 - A14 E W G DQ0 - DQ7 32 WORD LINE SIZE 8K x 8 TAG (A0, A1, A2 NOT USED)
MCM4464 SERIES 2
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to VSS = 0 V)
Rating Power Supply Voltage Voltage Relative to VSS Output Current (per I/O) Power Dissipation Temperature Under Bias Operating Temperature Storage Temperature Symbol VCC Vin, Vout Iout PD Tbias TA Tstg Value - 0.5 to 7.0 - 0.5 to VCC + 0.5 30 10 - 10 to + 85 0 to + 70 - 25 to +125 Unit V V mA W C C C This devices on this module contain circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to these high-impedance circuits. These BiCMOS memory circuits have been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The module is in a test socket or mounted on a printed circuit board and transverse air flow of at leat 500 linear feet per minute is maintained.
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V 10%, TA = 0 to + 70C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS (Voltages referenced to VSS = 0 V)
Parameter Supply Voltage (Operating Voltage Range) Input High Voltage (DQ0 - 35, TDQ0 - 7, WE, A0) (A1 - A15, OE, DCS, TCS) Input Low Voltage VIL Symbol VCC VIH 2.2 2.0 - 0.5** -- -- -- VCC + 0.3 V* VCC + 0.3 V* 0.8 V Min 4.5 Typ 5.0 Max 5.5 Unit V V
* VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width 20 ns) ** VIL (min) = - 3.0 V ac (pulse width 20 ns)
DC CHARACTERISTICS
Parameter Input Leakage Current (All Inputs, Vin = 0 to VCC) Output Leakage Current (G, xCS = VIH, Vout = 0 to VCC) AC Supply Current (G, xCS = VIL, Iout = 0 mA) Output Low Voltage (IOL = + 8 mA) OUtput High Voltage (IOH = - 4.0 mA) Note: Good decoupling of the local power supply should always be used. Symbol Ilkg(I) Ilkg(O) ICCA VOL VOH Min 2.4 Typ Max 10 10 1850 0.4 Unit A A mA V V
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25C, Periodically Sampled Rather Than 100% Tested)
Parameter Input Capacitance Input/Output Capacitance (A0, WE) (A1 - A15, OE, DCS, TCS) Symbol Cin Cin Cout Typ Max 110 10 10 Unit pF pF pF
MOTOROLA FAST SRAM
MCM4464 SERIES 3
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V 10%, TA = 0 to + 70C, Unless Otherwise Noted)
Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 ns Output Timing Measurement Reference Level . . . . . . . . . . . . . 1.5 V Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1A
READ CYCLE (See Notes 1 and 2)
-12 Parameter Address Access Time A0 Access Time Data/Tag Enable Access Time Output Enable Access Time Output Hold from Address Change Output Hold from A0 Change Data/Tag Enable Low to Output Active Data/Tag Enable High to Output High-Z Output Enable Low to Output Active Symbol tAVQV tA0QV tELQV tGLQV tAXQX tA0XQX tELQX tEHQZ tGLQX Min -- -- -- -- 4 4 2 1 1 Max 12 10 12 9 -- -- -- 9 -- Min -- -- -- -- 4 4 2 1 1 1 -15 Max 15 12 15 10 -- -- -- 10 -- 10 Min -- -- -- -- 4 4 2 1 1 1 -17 Max 17 14 17 11 -- -- -- 11 -- 11 Unit ns ns ns ns ns ns ns ns ns ns 3, 4 3, 4 3, 4 3, 4 Notes
Output Enable High to Output High-Z tGHQZ 1 9 NOTES: 1. WE is high for read cycle. 2. Enable timings are the same for both DCS and TCS. 3. Transition is measured 200 mV from steady-state voltage with load of Figure 1B. 4. This parameter is sampled and not 100% tested.
AC TEST LOADS
+5 V 480 OUTPUT Z0 = 50 RL = 50 VL = 1.5 V OUTPUT 255 5 pF
TIMING LIMITS
The table of timing values shows either a minimum or a maximum limit for each parameter. Input requirements are specified from the external system point of view. Thus, address setup time is shown as a minimum since the system must supply at least that much time (even though most devices do not require it). On the other hand, responses from the memory are specified from the device point of view. Thus, the access time is shown as a maximum since the device never provides data later than that time.
Figure 1A
Figure 1B
MCM4464 SERIES 4
MOTOROLA FAST SRAM
READ CYCLE 1 (See Note)
A1 - A15 tAVQV A0 tA0VQV tA0XQX tAXQX Q (DATA OUT) PREVIOUS DATA VALID DATA VALID
NOTE: Module is continuously selected (DCS or TCS = VIL, OE = VIL).
READ CYCLE 2 (See Note)
A1 - A15 tAVQV A0 tA0VQV tELQV tEHQZ
DCS/TCS (DATA/TAG ENABLE)
tELQX OE (OUTPUT ENABLE) tGLQV tGLQX Q (DATA OUT) DATA VALID
tGHQZ
NOTE: Address valid prior to or coincident with DCS or TCS going low.
MOTOROLA FAST SRAM
MCM4464 SERIES 5
WRITE CYCLE 1 (WE Controlled, See Notes 1 and 2)
-12 Parameter Address Setup Time A0 Setup Time Address Valid to End of Write A0 Valid to End of Write Write Pulse Width Data Valid to End of Write Data Hold Time Write Low to Data High-Z Write High to Output Active Write Recovery Time Symbol tAVWL tA0VWL tAVWH tA0VWH tWLWH tWLEH tDVWH tWHDX tWLQZ tWHQX tWHAX Min 5 0 12 10 7 6 0 0 3 0 Max -- -- -- -- -- -- -- 4 -- -- Min 5 0 15 12 10 7 0 0 3 0 0 -15 Max -- -- -- -- -- -- -- 5 -- -- -- Min 5 0 17 14 12 8 0 0 3 0 0 -17 Max -- -- -- -- -- -- -- 6 -- -- -- Unit ns ns ns ns ns ns ns ns ns ns ns 3, 4 3, 4 Notes
Write Recovery Time - A0 tWHA0X 0 -- NOTES: 1. A write occurs during the overlap of DCS or TCS low and WE low. 2. Enable timings are the same for both DCS and TCS. 3. Transition is measured 200 mV from steady-state voltage with load of Figure 1B. 4. This parameter is sampled and not 100% tested.
WRITE CYCLE 1
A1 - A15
tAVWH A0 tA0VWH DCS/TCS (DATA/TAG ENABLE) tWLEH tWLWH WE (WRITE ENABLE) tA0VWL tAVWL D (DATA IN) tWLQZ Q (DATA OUT) HIGH-Z HIGH-Z tDVWH DATA VALID
tWHAX
tWHA0X
tWHDX
tWHQX
MCM4464 SERIES 6
MOTOROLA FAST SRAM
WRITE CYCLE 2 (DCS or TCS Controlled, See Notes 1 and 2)
-12 Parameter Address Setup Time A0 Setup Time Address Valid to End of Write A0 Valid to End of Write Data/Tag Enable to End of Write Data Valid to End of Write Data Hold Time Write Recovery Time Write Recovery Time - A0 Symbol tAVEL tA0VEL tAVEH tA0VEH tELEH, tELWH tDVEH tEHDX tEHAX tEHA0X Min 0 0 12 10 12 6 5 5 5 Max -- -- -- -- -- -- -- -- -- Min 0 0 15 12 15 7 5 5 5 -15 Max -- -- -- -- -- -- -- -- -- Min 0 0 17 14 17 8 5 5 5 -17 Max -- -- -- -- -- -- -- -- -- Unit ns ns ns ns ns ns ns ns ns Notes
NOTES: 1. A write occurs during the overlap of DCS or TCS low and WE low. 2. Enable timings are the same for both DCS and TCS.
WRITE CYCLE 2
A1 - A15 tAVEH A0 tA0VEH tELEH DCS/TCS (DATA/TAG ENABLE) tA0VEL tAVEL WE (WRITE ENABLE) tDVEH D (DATA IN) DATA VALID tEHDX tELWH tEHAX tEHA0X
Q (DATA OUT)
HIGH-Z
MOTOROLA FAST SRAM
MCM4464 SERIES 7
ORDERING INFORMATION
(Order by Full Part Number) MCM
Motorola Memory Prefix Part Number
44X64
XX
XX
Speed (12 = 12 ns, 15 = 15 ns, 17 = 17 ns) Package (SG = Gold Pad SIMM)
Part Number MCM44A64 MCM44B64 MCM44C64 MCM44D64 MCM44E64 MCM44F64 MCM44G64 MCM44H64
Unified/Split Unified Unified Unified Unified Split Split Spllit Split
Word Line Size 4 8 16 32 4 8 16 32
TAG Depth 64K 32K 16K 8K 64K 32K 16K 8K
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MCM4464 SERIES 8
CODELINE TO BE PLACED HERE
*MCM4464/D*
MCM4464/D MOTOROLA FAST SRAM


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